Recrystallized Silicon Carbide (RSiC) Series
Our R-SiC series encompasses a complete range of high-purity silicon carbide products manufactured through a unique recrystallization process. This technology yields a microstructure of directly bonded SiC crystals with no secondary phases, delivering exceptional high-temperature performance, thermal shock resistance, and chemical stability. R-SiC products are the premier choice for the most demanding kiln and furnace applications operating up to 1,650°C.
Key Series Characteristics
| Property | Value |
|---|---|
| Max Service Temperature | 1,650°C |
| Bulk Density | ≥ 2.65 g/cm³ |
| Apparent Porosity | ≤ 17% |
| Flexural Strength (RT) | ≥ 100 MPa |
| Flexural Strength (1,400°C) | ≥ 80 MPa |
| Thermal Conductivity (1,200°C) | ≥ 30 W/m·K |
| CTE (RT–1,500°C) | ~4.5 × 10⁻⁶/°C |
| Purity | > 99% SiC |
| Bonding Type | Direct recrystallized SiC–SiC bond |